SI9410DY

Si9410DY N-channel enhancement mode field-effect transistor M3D315 Rev. 02 — 05 July 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9410DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1 2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description n/c 8 5 d Simplified outline Symbol source (s) gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors Si9410DY N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tamb = 25 °C; pulsed: tp ≤ 10 s Tamb = 25 °C; pulsed: tp ≤ 10 s VGS = 10 V; ID = 7 A VGS = 5 V; ID = 4 A VGS = 4.5 V; ID = 3.5 A Typ − − − − 24 30 32 Max 30 7 2.5 150 30 40 50 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC)...