Si9400DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.25 @ VGS = –10 V 0.40 @ VGS = –4.5 V
ID (A)
"2.5 "2.0
S
S
SO-8
NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction .
P-Channel 20-V (D-S) MOSFET
Si9400DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.25 @ VGS = –10 V 0.40 @ VGS = –4.5 V
ID (A)
"2.5 "2.0
S
S
SO-8
NC S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–20 "20 "2.5 "2.0 "10 –2.0 2.5
Unit
V
A
W 1.6 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70119 S-55458—Rev. K, 02-Mar-98 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
50
Unit
_C/W
1
Si9400DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 1 A VGS = –4.5 V, ID = .