SI7868DP

Si7868DP New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.00225 @ VGS = 10 V 0.00275 @ VGS = 4.5 V ID (A) 29 25 D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized APPLICATIONS D Low Output Voltage Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "16 29 Steady State Unit V 18 14 60 A 1.6 1.9 1.2 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 25 4.5 5.4 3.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71849 S-03130—Rev. B, 22-Jan-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7868DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Volta...