Si7703EDN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V...
Si7703EDN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S)
MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
–20
FEATURES
ID (A)
–6.3 –5.3 –4.6
rDS(on) (W)
0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V
D TrenchFETr Power
MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D Charger Switching
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V) Diode Forward
Voltage
0.48 V @ 0.5 A
IF (A)
1.0
PowerPAKt 1212-8
S
K
3.30 mm
A
1 2
3.30 mm
A S
3 4
K
G
G
K
8 7
3 kW
D
6 5
D
D P-Channel
MOSFET
A
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage (
MOSFET and Schottky) Reverse
Voltage (Schottky) Gate-Source
Voltage (
MOSFET) Continuous Drain Current (TJ = 150_C) (
MOSFET)a Pulsed Drain Current (
MOSFET) Continuous Source Current (
MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (
MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 71429 S-03709—Rev. A, 14-May-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C
Symbol
VDS VKA VGS ID IDM IS IF IFM
10 sec
–20 20 "12 –6.3 –4.5 –20 –2.3 1.0 7 2.8 1.5 2.0 1.0
Steady State
Unit
V
"12 –4.3 –3.1 A –1.1
1.3 0.7 1.1 0.6 –55 to 150 _C W
1
Si7703EDN
Vishay...