Si7336DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V
ID (A)
30 27
Qg (Typ)
36
D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D Low-Side DC/DC Conversion − Notebook − Server − Workstation D Synchronous Rectifier, POL
PowerPAK SO-8
6.15 mm
S 1 2 .
N-Channel MOSFET
Si7336DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V
ID (A)
30 27
Qg (Typ)
36
D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D Low-Side DC/DC Conversion − Notebook − Server − Workstation D Synchronous Rectifier, POL
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
D
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7336DP-T1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 1.0 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS PD TJ, Tstg
10 secs
30 "20 30 25 70 4.5 50 5.4 3.4
Steady State
Unit
V
18 15 A 1.8
1.9 1.2 −55 to 150
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7336DP
Vishay Silico.