Si6967DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = - 4.5...
Si6967DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = - 4.5 V - 8 0.045 at VGS = - 2.5 V
0.070 at VGS = - 1.8 V
ID (A) ± 5.0 ± 4.0 ± 3.0
FEATURES
Halogen-free TrenchFET® Power
MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
D1 1 S1 2 S1 3 G1 4
TSSOP-8 Si6967DQ
Top View
8 D2 7 S2 6 S2 5 G2
Ordering Information: Si6967DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
S1 D1
S2 G2
D2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a, b
IS
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit -8 ±8
± 5.0 ± 4.0 ± 30 - 1.25 1.1 0.72 - 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s.
t ≤ 10 s Steady State
Symbol RthJA
Typical 115
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 70811 S-81221-Rev. D, 02-Jun-08
Maximum 110
Unit °C/W
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Si6967DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currenta
D...
