SI6911DQ

Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = -4.5 V -12 0.035 @ VGS = -2.5 V 0.046 @ VGS = -1.8 V D TrenchFETr Power MOSFETS ID (A) -5.1 -4.5 -3.9 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6911DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 -5.1 Steady State Unit V -4.3 -3.5 -30 A -0.7 0.83 0.53 -55 to 150 W _C ID IDM IS PD TJ, Tstg -4.1 -1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72231 S-31064—Rev. A, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 86 124 59 Maximum 110 150 75 Unit _C/W 1 Si6911DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(...