SI5853DC

Si5853DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = - 4.5 V - 20 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V at 0.5 A IF (A) 1.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 A K K A S DG D Marking Code JA XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5853DC-T1-E3 (Lead (Pb)-free) Si5853DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S G K D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage (MOSFET and Schottky) VDS - 20 V Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) VKA VGS 20 ±8 ±8 V Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 25 °C TA = 85 °C ID - 3.6 - 2.6 - 2.7 - 1.9 Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a IDM - 10 IS - 1.8 - 0.9 A Average Forward Current (Schottky) IF 1.0 Pulsed Forward Current (Schottky) IFM 7 Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C PD 2.1 1.1 1.3 0.68 1.1 0.6 W 0.96 0.59 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c ...