Si5445DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)
0.035 @ VGS = --4.5 V --8 0....
Si5445DC
Vishay Siliconix
P-Channel 1.8-V (G-S)
MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)
0.035 @ VGS = --4.5 V --8 0.047 @ VGS = --2.5 V 0.062 @ VGS = --1.8 V
ID (A)
7.1 6.2 5.7
1206-8 ChipFETt
1
D D D D S D D G
S
G
Marking Code BC XX Lot Traceability and Date Code D P-Channel
MOSFET
Part # Code Bottom View
Ordering Information: Si5445DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
--8
Steady State
8
Unit
V
7.1 5.2 20 --2.1 2.5 1.3 --55 to 150 260
5.2 3.7 --1.1 1.3 0.7 W _C A
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
40 80 15
Maximum
50 95 20
Unit
_C/ C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manu...