Semiconductor
SI5314-H / SI5314-H(B)
IRED
Features
• Low power consumption
• Colorless transparency lens type • φ5mm(...
Semiconductor
SI5314-H / SI5314-H(B)
IRED
Features
Low power consumption
Colorless transparency lens type φ5mm(T-13/4) all plastic mold type High radiant intensity
Applications
Infrared remote control and free air transmission systems with low forward
voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions
unit : mm
STRAIGHT TYPE
STOPPER TYPE
PIN Connections 1.Anode 2.Cathode
KLI-8005-002
1
SI5314-H / SI5314-H(B)
Absolute maximum ratings
Characteristic
Power Dissipation Forward Current * Peak Forward Current Reverse
Voltage Operating Temperature Storage Temperature * Soldering Temperature
2 1
Symbol
PD IF IFP VR Topr Tstg Tsol
Ratings
150 100 1 4 -25 -30 260 85 100 for 5 seconds
Unit
mW mA A V
*1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Forward
Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Reverse Current
R
Symbol
VF IE
Test Condition
IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA
Min.
15 -
Typ.
1.3 35 950 50 ±25
Max.
1.7 10 -
Unit
V mW/Sr nm nm uA deg
λP
* Half angle
3
θ /2
1
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-8005-002
2
SI5314-H / SI5314-H(B)
Characteristic Diagrams
Fig. 1 IF - VF Fig. 2 IE - IF
Forward
Voltage VF [V]
Radiant Intensity IE [mW/Sr]
Forward Current IF [mA]
...