Dual N-Channel 30-V (D-S) MOSFET
Si4944DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0095 at VGS = 10 V 0.016 at VGS = 4.5 V
ID (A) 12.2 9.4
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • DC/DC Conversion • Load Switching
D1 D2
RoHS
COMPLIANT
G1 G2
S1 N-Channe.
Dual N-Channel MOSFET
Dual N-Channel 30-V (D-S) MOSFET
Si4944DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0095 at VGS = 10 V 0.016 at VGS = 4.5 V
ID (A) 12.2 9.4
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested
APPLICATIONS • DC/DC Conversion • Load Switching
D1 D2
RoHS
COMPLIANT
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
12.2 9.3 8.8 6.7
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.9 1.1
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
2.3 1.2
1.3 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 42 75 19
Maximum 55 95 25
Unit °C/W
Document Number: 72512 S-82284-Rev. B, 22-Sep-08
www.vishay.com 1
Si4944DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
.