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SI4944DY Datasheet

Part Number SI4944DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI4944DY DatasheetSI4944DY Datasheet (PDF)

Dual N-Channel 30-V (D-S) MOSFET Si4944DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 12.2 9.4 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • DC/DC Conversion • Load Switching D1 D2 RoHS COMPLIANT G1 G2 S1 N-Channe.

  SI4944DY   SI4944DY






Dual N-Channel MOSFET

Dual N-Channel 30-V (D-S) MOSFET Si4944DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0095 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A) 12.2 9.4 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • DC/DC Conversion • Load Switching D1 D2 RoHS COMPLIANT G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 12.2 9.3 8.8 6.7 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.9 1.1 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.3 1.2 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 42 75 19 Maximum 55 95 25 Unit °C/W Document Number: 72512 S-82284-Rev. B, 22-Sep-08 www.vishay.com 1 Si4944DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage .


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