Dual P-Channel 12-V (D-S) MOSFET
Si4933DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.014 at VGS = -...
Dual P-Channel 12-V (D-S)
MOSFET
Si4933DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) (Ω) 0.014 at VGS = - 4.5 V 0.017 at VGS = - 2.5 V 0.022 at VGS = - 1.8 V
ID (A) - 9.8 - 8.9 - 7.8
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power
MOSFET Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Load Switching
SO-8
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 G1
S2 G2
D1 P-Channel
MOSFET
D2 P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source
Voltage
VDS - 12
Gate-Source
Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 9.8 - 7.8
- 7.4 - 5.9
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.0 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 45 85 26
Maximum 62.5 110 35
Unit °C/W
Document Number: 71980 S09-0867-Rev. D, 18-May-09
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Si4933DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parame...