Si4866DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.0055 ...
Si4866DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.0055 at VGS = 4.5 V 0.008 at VGS = 2.5 V
ID (A) 17 14
FEATURES Halogen-free According to IEC 61249-2-21
Available TrenchFET® Power
MOSFETs PWM Optimized for High Efficiency Low Output
Voltage 100 % Rg Tested
APPLICATIONS Synchronous Rectifier Point-of-Load Synchronous Buck Converter
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4866DY-T1-E3 (Lead Pb)-free) Si4866DY-T1-GE3 (Lead Pb)-free and Halogen-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source
Voltage
VDS 12
Gate-Source
Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
17 14
11 8
Pulsed Drain Current
IDM ± 50
Continuous Source Current (Diode Conduction)a
IS 2.7 1.40
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.0 2.0
1.6 1.0
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (
MOSFET)a
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 34 67 15
Maximum 41 80 19
Unit V
A
W °C
Unit °C/W
Document Number: 71699 S09-0228-Rev. D, 09-Feb-09
www.vishay.com 1
Si4866DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter...
