Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 10 V 60
0.031 at VGS = 4.5 V
ID (A) 8.5 7.2
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs
175 °C Maximum Junction Temperature
Compliant to RoHS Directive 2002/95/EC
S1 S2 S3 G4
SO-8
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