Si4834BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
...
Si4834BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S)
MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.022 at VGS = 10 V 0.030 at VGS = 4.5 V
ID (A) 7.5 6.5
SCHOTTKY PRODUCT SUMMARY
VDS (V) 30
VSD (V) Diode Forward
Voltage
0.50 V at 1.0 A
IF (A) 2.0
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power
MOSFET PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Symmetrical Buck-Boost DC/DC Converter
D1 D2
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Schottky Diode G1 G2
Top View
Ordering Information: Si4834BDY-T1-E3 (Lead (Pb)-free) Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
7.5 6.0
5.7 4.6
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.0 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
MOSFET
Typ.
Max.
52 62.5
93 110
35 40
Schottky
Typ.
Max.
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