SI4832DY

Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 9 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.53 V @ 3.0 A IF (A) 4.0 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D Ordering Information: D D D N-Channel MOSFET S Si4832DY Si4832DY-T1 (with Tape and Reel) Schottky Diode G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C VDS VGS ID IDM IS IF IFM 2.5 1.6 2.0 1.3 - 55 to 150 2.1 4.0 50 1.4 0.9 1.2 0.8 - 55 to 150 _C W 9 7.5 50 1.2 2.3 Symbol Limit 10 sec 30 30 "20 6.9 5.6 Steady State Unit V A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi t (t v 10 sec) )a Device MOSFET Schottky MOSFET Symbol Typical 40 50 Maximum 50 60 90 100 Unit RthJA 70 80 _C/W Maximum Junction-to-Ambient Junction to Ambient (t = steady state)a Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Schottky For ...