SI4825DY

P-Channel 30-V (D-S) MOSFET Si4825DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.014 at VGS = - 10 V 0.022 at VGS = - 4.5 V ID (A) - 11.5 - 9.2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4825DY-T1-E3 (Lead (Pb)-free) Si4825DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 11.5 - 9.2 - 8.1 - 6.5 Pulsed Drain Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.5 - 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.9 1.5 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 32 68 15 Maximum 42 85 18 Unit °C/W Document Number: 71291 S09-0868-Rev. D, 18-May-09 www.vishay.com 1 Si4825DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250...