Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V ...
Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V
ID (A)
7.5 6.5
FEATURES D TrenchFETr Power
MOSFET D 100% Rg Tested
Pb-free Available
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information:
Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
D1 D2
G1 G2
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
L = 0.1 mH TA = 25_C TA = 70_C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30 "20 7.5 5.7 6.0 4.6 20 1.7 0.9 10
5 2...
