SI4559EY

Si4559EY Vishay Siliconix N- and P-Channel 60-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 60 0.055 at VGS = 10 V 0.075 at VGS = 4.5 V P-Channel - 60 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) ± 4.5 ± 3.9 ± 3.1 ± 2.8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 175 °C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free) Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C ID ± 4.5 ± 3.8 ± 3.1 ± 2.6 Pulsed Drain Current IDM ± 30 ± 30 Continuous Sourc...