N- and P-Channel MOSFET
Si4505DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.018 at VGS =...
N- and P-Channel
MOSFET
Si4505DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.018 at VGS = 10 V 0.027 at VGS = 4.5 V
P-Channel
-8
0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V
ID (A) 7.8 6.4 - 5.0 - 4.0
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information:Si4505DY-T1-E3 (Lead (Pb)-free) Si4505DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power
MOSFET Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Level Shift Load Switch
D1 S2
G2 G1
S1 D2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source
Voltage
VDS 30
-8
Gate-Source
Voltage
VGS
± 20
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
7.8 6.0
6.0
- 5.0
- 3.8
5.2
- 3.6
- 3.0
Pulsed Drain Current
IDM 30
- 30
Continuous Source Current (Diode Conduction)a, b
IS
1.8
1.0
- 1.8
- 1.0
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
2 1.3
1.20 2
1.2
0.75 1.3 0.75
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
N-Channel
Typ.
Max.
50 62.5
85 105
30 40
P-Channel
Typ.
Max.
50 62.5
...
