SI4493DY

Si4493DY New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.01225 @ VGS = - 2.5 V - 11 FEATURES ID (A) - 14 rDS(on) (W) 0.00775 @ VGS = - 4.5 V D TrenchFETr Power MOSFET APPLICATIONS D Load Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C -8 A Symbol VDS VGS 10 secs Steady State - 20 "12 Unit V - 14 - 10 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72256 S-31420—Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 84 21 Unit _C/W 1 Si4493DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward ...