N-Channel 200-V (D-S) MOSFET
Si4490DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200 0.080 at VGS = 10 V ...
N-Channel 200-V (D-S)
MOSFET
Si4490DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200 0.080 at VGS = 10 V 0.090 at VGS = 6.0 V
ID (A) 4.0 3.8
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFETs
Compliant to RoHS Directive 2002/95/EC
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source
Voltage
VDS 200
Gate-Source
Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
4.0 2.85 3.2 2.3
Pulsed Drain Current
IDM 40
Avalanch Current
L = 0.1 mH
IAS
15
Continuous Source Current (Diode Conduction)a
IS 2.6 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.1 1.56 2.0 1.0
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 33 65 17
Maximum 40 80 21
Unit °C/W
Document Number: 71341 S09-0705-Rev. C, 27-Apr-09
www.vishay.com 1
Si4490DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold
Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ga...
