N-Channel 60 V (D-S) MOSFET
Si4470EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.011 at VGS = 10 V 0....
N-Channel 60 V (D-S)
MOSFET
Si4470EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.011 at VGS = 10 V 0.013 at VGS = 6.0 V
ID (A) 12.7 11.7
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFETs
175 °C Maximum Junction Temperature
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Primary Side Switch
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
G
Top View
Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source
Voltage
VDS 60
Gate-Source
Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
12.7 9.0 10.6 7.5
Pulsed Drain Current
IDM 50
Avalanche Current
L = 0.1 mH
IAS
50
Continuous Source Current (Diode Conduction)a
IS 3.1 1.5
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.75 1.85 2.6 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 33 65 17
Maximum 40 80 21
Unit °C/W
Document Number: 71606 S10-2137-Rev. D, 20-Sep-10
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Si4470EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Tes...
