SI4431BDY

P-Channel 30-V (D-S) MOSFET Si4431BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = - 10 V - 30 0.050 at VGS = - 4.5 V ID (A) - 7.5 - 5.8 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.5 - 6.0 - 5.7 - 4.6 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.1 - 1.2 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.6 1.5 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 38 70 22 Maximum 50 85 28 Unit °C/W Document Number: 72092 S09-0131-Rev. C, 02-Feb-09 www.vishay.com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate V...