SI4429EDY

Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V FEATURES ID (A) –13.0 –12.0 –9.0 D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V APPLICATIONS D Battery Switch D Load Switch D SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.5 kW ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.0 IDM IS –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 0.9 W _C –7.5 A Symbol VDS VGS 10 secs Steady State –30 "12 Unit V –13.0 –9.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70709 S-04712—Rev. A, 24-Sep-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 32 68 15 Maximum 42 85 18 Unit _C/W 1 Si4429EDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –24 V, VGS = 0 V VD...