SI4413DY

New Product P-Channel 30-V (D-S) MOSFET Si4413DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.0095 at VGS = - 10 V - 30 0.0145 at VGS = - 4.5 V ID (A) - 13 - 10 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4413DY-T1 Si4413DY-T1-E3 (Lead (Pb)-free) FEATURES TrenchFET® Power MOSFET APPLICATIONS Notebook - Load switch - Battery switch S G D P-Channel MOSFET Pb-free Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 13 - 10.5 -9 - 7.5 Pulsed Drain Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.5 1.9 0.95 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF * Pb containing terminations are not RoHS compliant, exemptions may apply. Typical 33 70 16 Maximum 42 84 21 Unit °C/W Document Number: 72054 S-70315-Rev. B, 12-Feb-07 www.vishay.com 1 Si4413DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(t...