Si4392DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.00975 ...
Si4392DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching
MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.00975 at VGS = 10 V 0.01375 at VGS = 4.5 V
ID (A) 12.5
10.0
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4392DY-T1 Si4392DY-T1-E3 (Lead (Pb)-free)
FEATURES
Extremely Low Qgd for Low Switching Losses TrenchFET® Power
MOSFET
Available
100 % Rg Tested
RoHS*
COMPLIANT
APPLICATIONS
High-Side DC/DC Conversion - Notebook - Server
D
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)a
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
L = 0.1 mH TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
Limits 30 ± 20 12.5 10 50 2.7 30 45 3.0 1.9
- 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGSa
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)
Notes: a. Surface mounted on 1" x 1" FR4 board, t 10 s.
Symbol
RthJA RthJF
Typical 33 16
Maximum 42 20
Unit °C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72151 S11-0209-Rev. F, 14-Feb-11
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Si4392DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Cond...
