SI4362DY

Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V ID (A) 20 19 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers SO-8 D S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY—E3 (Lead Free) Si4362DY-T1—E3 (Lead Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limits 30 "12 20 15 60 2.9 3.5 2.2 −55 to 150 Unit A W THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 71628 S-40762—Rev. E, 19-Apr-04 www.vishay.com Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit _C/W 1 Si4362DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Tra...