SI4340DY

Si4340DY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 Channel-2 20 0.012 at VGS = 10 V 0.0175 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A) 9.6 7.8 13.5 12.8 SCHOTTKY PRODUCT SUMMARY VDS (V) 20 VSD (V) Diode Forward Voltage 0.53 V at 3 A IF (A) 2.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters - Game Stations - Notebook PC Logic SO-14 D1 1 D1 2 G1 3 G2 4 S2 5 S2 6 S2 7 14 S1 13 S1 12 D2 11 D2 10 D2 9 D2 8 D2 D1 G1 G2 D2 Schottky Diode Top View Ordering Information: Si4340DY-T1-E3 (Lead (Pb)-free) Si4340DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Channel-1 Channel-2 Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 ± 16 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 9.6 7.7 7.3 13.5 9.9 5.8 10.8 7.5 Pulsed Drain Current IDM 40 50 Continuous Source Current (Diode Conduction)a IS 1.8 1.04 2.73 1.30 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.28 1.14 0.73 3.0 1.43 1.9 0.91 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambi...