Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.125 @ VGS = 4.5 V...
Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V
ID (A)
2.4 1.8
D1
D2
TSOP-6 Top View
G1 1 6 D1
3 mm
S2
2
5
S1
G1
G2
G2
3
4
D2
2.85 mm
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS
5 sec
20
Steady State
"12
Unit
V
2.4 ID IDM IS PD TJ, Tstg 1.05 1.15 0.59 β55 to 150 1.7 8
2.0 1.4 A 0.75 0.83 0.53 W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1β x 1β FR4 Board. Document Number: 71178 S-03511βRev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
93 130 75
Maximum
110 150 90
Unit
_C/W
1
Si3900DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward
Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS...