SI3850DV

Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel –20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "1.2 "0.95 "3.5 1 1.25 0.8 P-Channel –20 "12 "0.85 "0.65 "2.5 –1 Unit V A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec) Symbol RthJA N- or P- Channel 100 Unit _C/W For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-1 Si3850DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –20...