Si3455ADV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
rDS(on) (W)
0.100 @ VGS = −10 V 0.170 @ VGS = −4.5 V
ID (A)
−3.5 −2.7
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(4) S
2
2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free) Marking Code: A5xxx (1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current.
P-Channel 30-V (D-S) MOSFET
Si3455ADV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−30
rDS(on) (W)
0.100 @ VGS = −10 V 0.170 @ VGS = −4.5 V
ID (A)
−3.5 −2.7
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(4) S
2
2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free) Marking Code: A5xxx (1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−30 "20
Unit
V
−3.5 −2.8 −20 −1.7 2.0 1.3 −55 to 150
−2.7 −2.1 A
−0.95 1.14 0.73 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71090 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 30
Maximum
62.5 110 36
Unit
_C/W
1
Si3455ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS .