Si3454ADV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
4.5 3.8
rDS(on) (W...
Si3454ADV
Vishay Siliconix
N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
4.5 3.8
rDS(on) (W)
0.060 @ VGS = 10 V 0.085 @ VGS = 4.5 V
D TrenchFETr Power
MOSFET D 100% Rg Tested
TSOP-6 Top View
(1, 2, 5, 6) D 1 3 mm 6 5
2
3
4
(3) G
2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1—E3 (Lead Free) Marking Code: A4xxx
(4) S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
30 "20 4.5 3.6 20 1.7 2.0 1.3
Steady State
Unit
V
3.4 2.7 A
1.0 1.14 0.73 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 30
Maximum
62.5 110 36
Unit
_C/W
1
Si3454ADV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward
Voltagea VGS(th) IGSS...
