www.vishay.com
Si3429EDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) (Ω) MAX. ...
www.vishay.com
Si3429EDV
Vishay Siliconix
P-Channel 20 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) (Ω) MAX. 0.0210 at VGS = -4.5 V 0.0240 at VGS = -2.5 V 0.0380 at VGS = -1.8 V
ID (A) a, e -8 -8 -8
Qg (TYP.) 43.2 nC
TSOP-6 Single S 4
D 5 D 6
1 D Top View
2 D
3 G
Marking Code: BM
Ordering Information: Si3429EDV-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES TrenchFET® power
MOSFET
100 % Rg tested Built-in ESD protection
- Typical ESD performance 3000 V Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS Power management for portable
and consumer - Load switches - DC/DC converters
G
S
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and St...
