New Product
N-Channel 30-V (D-S) MOSFET
Si3424BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.028 at VGS...
New Product
N-Channel 30-V (D-S)
MOSFET
Si3424BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.028 at VGS = 10 V 30
0.038 at VGS = 4.5 V
ID (A) 8a 7
Qg (Typ) 6.2
FEATURES TrenchFET® Power
MOSFET 100 % Rg Tested
APPLICATIONS Load Switch for Portable Devices
RoHS
COMPLIANT
TSOP-6 Top View
D 3 mm D
G
16 25 34
2.85 mm
D D S
Marking Code
YY
AG XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free)
D (1, 2, 5, 6)
G (3)
(4) S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
...
