P-Channel 20-V (D-S) MOSFET
Si2323DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.039 at VGS = - 4.5 V - ...
P-Channel 20-V (D-S)
MOSFET
Si2323DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.039 at VGS = - 4.5 V - 20 0.052 at VGS = - 2.5 V
0.068 at VGS = - 1.8 V
ID (A) - 4.7 - 4.1 - 3.5
FEATURES Halogen-free According to IEC 61249-2-21
Available TrenchFET® Power
MOSFET
APPLICATIONS Load Switch PA Switch
TO-236 (SOT-23)
G1 S2
3D
Top View Si2323DS (D3)* * Marking Code
Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free) Si2323DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source
Voltage
VDS - 20
Gate-Source
Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
- 4.7 - 3.8
- 3.7 - 2.9
Pulsed Drain Current
IDM - 20
Continuous Source Current (Diode Conduction)a, b
IS
- 1.0
- 0.6
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
1.25 0.75 0.8 0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain)
t≤5s Steady State Steady State
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.
Symbol RthJA RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72024 S09-0133-Rev. D, 02-Feb-09
Typical 75 120 40
Maximum 100 166 50
Unit °C/W
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Si2323DS
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