P-Channel 20-V (D-S) MOSFET
Si2321DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.057 at VGS = - 4.5 V - ...
P-Channel 20-V (D-S)
MOSFET
Si2321DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.057 at VGS = - 4.5 V - 20 0.076 at VGS = - 2.5 V
0.110 at VGS = - 1.8 V
ID (A) - 3.3 - 2.8 - 2.3
TO-236 (SOT-23)
G1 S2
3D
FEATURES Halogen-free Option Available TrenchFET® Power
MOSFETS
APPLICATIONS Load Switch PA Switch
Top View Si2321DS *(D1) * Marking Code
Ordering Information: Si2321DS-T1-E3 (Lead (Pb)-free) Si2321DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source
Voltage
VDS - 20
Gate-Source
Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 3.3 - 2.6
- 2.9 - 2.3
Pulsed Drain Current
IDM - 12
Continuous Source Current (Diode Conduction)a
IS
- 0.74
- 0.59
Power Dissipationa
TA = 25 °C TA = 70 °C
PD
0.89 0.71 0.57 0.45
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
RoHS
COMPLIANT
Unit V A W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typical 115 140 60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72210 S-80642-Rev. B, 24-Mar-08
Maximum 140 175 75
Unit °C/W
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Si2321DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
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