SI2314EDS

N-Channel 20-V (D-S) MOSFET Si2314EDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.033 at VGS = 4.5 V 0.040 at VGS = 2.5 V 0.051 at VGS = 1.8 V ID (A) 4.9 4.4 3.9 TO-236 (SOT-23) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET ESD Protected: 3000 V APPLICATIONS LI-lon Battery Protection D G1 S2 3D Top View Si2314EDS (C4)* *Marking Code Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free) Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) 3 kΩ G N-Channel S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 4.9 3.77 3.9 3.0 Pulsed Drain Currentb IDM 15 Avalanche Currentb Single Avalanche Energy L = 0.1 mH IAS EAS 15 11.25 Continuous Source Current (Diode Conduction)a IS 1.0 Power Dissipationa TA = 25 °C TA = 70 °C PD 1.25 0.75 0.80 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit °C/W Document Number: 71611 S09-0130-Rev. D, 02-Feb-09 www.vishay.com 1 Si2314EDS Vishay Siliconix...