N-Channel 20 -V (D-S) MOSFET
Si2312DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V 0....
N-Channel 20 -V (D-S)
MOSFET
Si2312DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V
ID (A)
4.9 4.4 3.9
Qg (Typ)
11.2
TO-236 (SOT-23)
G1 S2
3D
FEATURES D 1.8-V Rated D RoHS Compliant
Top View Si2312DS (C2)* *Marking Code
Ordering Information: Si2312DS-T1 Si2312DS-T1—E3 (Lead (Pb)-Free)
Pb-free Available
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
L = 0.1 mH
TA= 25_C TA= 70_C
VDS VGS
ID
IDM IAS EAS IS
PD
TJ, Tstg
4.9 3.9
1.25 0.80
20 "8
15 15 11.25 1.0
−55 to 150
3.77 3.0
0.75 0.48
Unit
V
A
mJ A W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-50574—Rev. E, 04-Apr-05
t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
75 120 40
Maximum
100 166 50
Unit
_C/W
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Si2312DS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown
Voltage Gate-Threshold
Voltage Gate-Body Leakage
Zero Gate
Voltage Drain Current
On-St...
