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SI2311DS

Part Number	SI2311DS
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	P-Channel 1.8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.045 at VGS = - 4.5 V -...
Datasheet	SI2311DS PDF File

Overview

P-Channel 1.
8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
045 at VGS = - 4.
5 V - 8 0.
072 at VGS = - 2.
5 V 0.
120 at VGS = - 1.
8 V ID (A) - 3.
5 - 2.
8 - 2.
0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch RoHS COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2311DS (C1)* * Marking Code Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free) Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 8 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 7...

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