P-Channel 30-V (D-S) MOSFET
Si2303BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.200 at VGS = - 10 V 0.380 at VGS = - 4.5 V
ID (A)b - 1.64 - 1.0
FEATURES • Halogen-free Option Available
Pb-free Available
RoHS*
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2303BDS (L3)* * Marking Code
Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Param.
P-Channel MOSFET
P-Channel 30-V (D-S) MOSFET
Si2303BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.200 at VGS = - 10 V 0.380 at VGS = - 4.5 V
ID (A)b - 1.64 - 1.0
FEATURES • Halogen-free Option Available
Pb-free Available
RoHS*
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2303BDS (L3)* * Marking Code
Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C TA = 70 °C
ID
- 1.64 - 1.31
- 1.49 - 1.2
Pulsed Drain Currenta
IDM - 10
Continuous Source Current (Diode Conduction)b
IS
- 0.75
- 0.6
Power Dissipationb
TA = 25 °C TA = 70 °C
PD
0.9 0.7 0.57 0.45
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc
Symbol RthJA
Typical 120 140
Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72065 S-80642-Rev. C, 24-Mar-08
Maximum 145 175
Unit °C/W
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Si2303BDS
Vishay Sili.