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SI2303BDS Datasheet

Part Number SI2303BDS
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description P-Channel MOSFET
Datasheet SI2303BDS DatasheetSI2303BDS Datasheet (PDF)

P-Channel 30-V (D-S) MOSFET Si2303BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.200 at VGS = - 10 V 0.380 at VGS = - 4.5 V ID (A)b - 1.64 - 1.0 FEATURES • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Param.

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P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET Si2303BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.200 at VGS = - 10 V 0.380 at VGS = - 4.5 V ID (A)b - 1.64 - 1.0 FEATURES • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G1 S2 3D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C ID - 1.64 - 1.31 - 1.49 - 1.2 Pulsed Drain Currenta IDM - 10 Continuous Source Current (Diode Conduction)b IS - 0.75 - 0.6 Power Dissipationb TA = 25 °C TA = 70 °C PD 0.9 0.7 0.57 0.45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Symbol RthJA Typical 120 140 Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72065 S-80642-Rev. C, 24-Mar-08 Maximum 145 175 Unit °C/W www.vishay.com 1 Si2303BDS Vishay Sili.


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