SI1551DL

Complementary 20 V (D-S) MOSFET Si1551DL Vishay Siliconix PRODUCT SUMMARY N-Channel P-Channel VDS (V) 20 - 20 RDS(on) (Ω) 1.9 at VGS = 4.5 V 3.7 at VGS = 2.7 V 4.2 at VGS = 2.5 V 0.995 at VGS = - 4.5 V 1.600 at VGS = - 2.7 V 1.800 at VGS = - 2.5 V ID (A) 0.30 0.22 0.21 - 0.44 - 0.34 - 0.32 Qg (Typ.) 0.72 0.52 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 2.5 V Rated Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Top View Marking Code YY RD XX Lot Traceability and Date Code Part # Code Ordering Information: Si1551DL-T1-E3 (Lead (Pb)-free) Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID 0.30 0.22 0.29 0.21 - 0.44 - 0.31 - 0.41 - 0.30 Pulsed Drain Current IDM 0.6 - 1.0 Continuous Source Current (Diode Conduction)a IS 0.25 0.23 - 0.25 - 0.23 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 0.30 0.16 0.27 0.14 0.30 0.16 0.27 0.14 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface mounted on 1"...