SI1472DH

New Product Si1472DH Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.057 at VGS = 10 V 0.082 at VGS = 4.5 V ID (A) 5.6a 4.7 Qg (Typ) 5.5 FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Load Switch for Portable Devices RoHS COMPLIANT www.DataSheet4U.com SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code AL XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free) D 2 5 D G 3 4 S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 5.6 4.5 4.2b, c 3.4b, c 15 10 5 2.3 1.3b, c 2.8 1.8 1.5b, c 1.0b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C)a ID A Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM IAS EAS IS mJ A Maximum Power Dissipationa PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73891 S-71344–Rev. B, 09-Jul-07 www.vishay.com 1 t ≤ 5 sec Steady Symbol RthJA RthJF Typical 60 34 Maximum 80...