N-Channel 20 V (D-S) MOSFET
Si1400DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.150 at VGS = 4.5 V ...
N-Channel 20 V (D-S)
MOSFET
Si1400DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.150 at VGS = 4.5 V 0.235 at VGS = 2.5 V
ID (A) 1.7 1.3
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFET: 2.5 V Rated Compliant to RoHS Directive 2002/95/EC
SOT-363 SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
YY
ND XX
Lot Traceability and Date Code
Part # Code
Top View
Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free) Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 85 °C
TA = 25 °C TA = 85 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
20
± 12
1.7 1.6
1.2 1.0
5
0.8 0.8
0.625
0.568
0.40 0.295
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typical 165 180 105
Maximum 200 220 130
Unit °C/W
Document Number: 71179 S10-0721-Rev. D, 29-Mar-10
www.vishay.com 1
Si1400DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold
Voltage Gate-...
