P-Channel 2.5-V (G-S) MOSFET
Si1303DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.430 at VGS = - 4.5 V
...
P-Channel 2.5-V (G-S)
MOSFET
Si1303DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.430 at VGS = - 4.5 V
- 20 0.480 at VGS = - 3.6 V
0.700 at VGS = - 2.5 V
ID (A) - 0.72 - 0.68 - 0.56
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFETs 2.5 V Rated Compliant to RoHS Directive 2002/95/EC
SOT-323 SC-70 (3-LEADS) G1
3D
S2
Top View
Marking Code
YY
LA X
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1303DL-T1-E3 (Lead (Pb)-free) Si1303DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID IDM
Continuous Diode Current (Diode Conduction)a
IS
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
PD TJ, Tstg
5 s Steady State
- 20
± 12
- 0.72
- 0.67
- 0.58
- 0.54
- 2.5
- 0.28
- 0.24
0.34 0.29
0.22 0.19
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typical 315 360 285
Maximum 375 430 340
Unit °C/W
Document Number: 71075 S10-0110-Rev. F, 18-Jan-10
www.vishay.com 1
Si1303DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
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