P-Channel 12 V (D-S) MOSFET
Si1065X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () 0.156 at VGS = - 4.5 V...
P-Channel 12 V (D-S)
MOSFET
Si1065X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () 0.156 at VGS = - 4.5 V 0.190 at VGS = - 2.5V 0.245 at VGS = - 1.8V
ID (A) 1.18 1.07 0.49
Qg (Typ.) 6.7 nC
FEATURES TrenchFET® Power
MOSFET 100 % Rg Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Load Switch for Portable Devices
SC-89 (3-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
YY
W XX
Lot Traceability and Date Code
Part # Code
S G
Top View Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit - 12 ±8 - 1.18b, c - 0.94b, c -8 - 0.2b, c 0.236b, c 0.151b, c - 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
t 5 s
Steady State State
Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s.
Symbol RthJA
Typical 440
540
Maximum 530
650
Unit °C/W
Document Number: 74320
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-1619-R...