SI1046R

New Product Si1046R Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.420 at VGS = 4.5 V 20 0.501 at VGS = 2.5 V 0.660 at VGS = 1.8 V ID (A)a 0.606 0.505 0.15 0.92 Qg (Typ.) FEATURES Halogen-free Option Available TrenchFET® Power MOSFET: 1.8 V Rated ESD Protected: 2000 V RoHS COMPLIANT APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers www.DataSheet4U.com SC75-3L G 1 Marking Code 3 D J XX YY Lot Traceability and Date Code S 2 Top View Part # Code Ordering Information: Si1046R-T1-E3 (Lead (Pb)-free) Si1046R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.606b, c 0.485b, c 2.5 0.21b, c 0.25b, c 0.16b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. t≤5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document N...