P-Channel 20 V (D-S) MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
8 at VGS = - 4.5 V
12 a...
P-Channel 20 V (D-S)
MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
8 at VGS = - 4.5 V
12 at VGS = - 2.5 V - 20
15 at VGS = - 1.8 V
20 at VGS = - 1.5 V
ID (mA) - 150 - 125 - 100 - 30
SC-75A or SC-89
G1
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X 3D
S2
Marking Code: H
Top View
Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free According to IEC 61249-2-21
Definition High-Side Switching Low On-Resistance: 8 Low Threshold: 0.9 V (typ.) Fast Switching Speed: 45 ns TrenchFET® Power
MOSFETs: 1.5 V Rated ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
BENEFITS Ease in Driving Switches Low Offset (Error)
Voltage Low-
Voltage Operation High-Speed Circuits Low Battery
Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1031R
Si1031X
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source
Voltage
VDS - 20
Gate-Source
Voltage
VGS ± 6
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta
TA = 25 °C TA = 85 °C
ID IDM
- 150
- 140
- 110
- 100
- 500
- 165
- 155
- 150
- 125
- 600
Continuous Source Current (Diode Conduction)a
IS - 250 - 200 - 340 - 240
Max...