SI1026X

Si1026X New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) 60 rDS(on) (W) 1.40 @ VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 500 FEATURES D D D D D D Low On-Resistance: 1.40 W Low Threshold: 2 V (typ) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ) Low Input and Output Leakage Miniature Package BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: E D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S-03518—Rev. A, 23-Apr-01 www.vishay.com TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C ID IDM IS 450 280 145 –55 to 150 2000 Symbol VDS VGS 5 secs 60 "20 320 230 –650 Steady State Unit V 305 220 mA 380 250 130 mW _C V 1 Si1026X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-So...