P-Channel 60 V (D-S) MOSFET
Si1021R
Vishay Siliconix
PRODUCT SUMMARY
VDS(min.) (V) - 60
RDS(on) () 4.0 at VGS = - 1...
P-Channel 60 V (D-S)
MOSFET
Si1021R
Vishay Siliconix
PRODUCT SUMMARY
VDS(min.) (V) - 60
RDS(on) () 4.0 at VGS = - 10 V
VGS(th) (V) - 1 to 3.0
ID (mA) - 190
SC-75A (SOT-416)
G1
S2
3D Marking Code: F
Top View Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power
MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 20 pF (typ.) Miniature Package ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc. Battery Operated Systems Power Supply Converter Circuits Solid-State Relays
BENEFITS Ease in Driving Switches Low Offset
Voltage Low-
Voltage Operation High-Speed Circuits Easily Driven without Buffer Small Board Area
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb
TA = 25 °C TA = 85 °C
Power Dissipationa Maximum Junction-to-Ambienta
TA = 25 °C TA = 85 °C
Operating Junction and Storage Temperature Range
Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature.
VDS VGS
ID
IDM
PD
RthJA TJ, Tstg
- 60 ± 20 - 190 - 135 - 650 250 130 500 - 55 to 150
Unit V
mA
mW °C/W
°C
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